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EPC2007C

EPC2007C

EPC2007C

EPC

GANFET N-CH 100V 6A DIE OUTLINE

compliant

EPC2007C Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.92400 -
47362 items
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Bom Cost Down
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Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 30mOhm @ 6A, 5V
Vgs(th) (Max) @ Id 2.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs 2.2 nC @ 5 V
Vgs (Max) +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds 220 pF @ 50 V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Die Outline (5-Solder Bar)
Package / Case Die
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