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FBG30N04CC

FBG30N04CC

FBG30N04CC

EPC Space, LLC

GAN FET HEMT 300V4A COTS 4FSMD-C

compliant

FBG30N04CC Pricing & Ordering

Quantity Unit Price Ext. Price
1 $346.39000 $346.39
500 $342.9261 $171463.05
1000 $339.4622 $339462.2
1500 $335.9983 $503997.45
2000 $332.5344 $665068.8
2500 $329.0705 $822676.25
100 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 300 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 404mOhm @ 4A, 5V
Vgs(th) (Max) @ Id 2.8V @ 600µA
Gate Charge (Qg) (Max) @ Vgs 2.6 nC @ 5 V
Vgs (Max) +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds 450 pF @ 150 V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-SMD
Package / Case 4-SMD, No Lead
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