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FBG10N05AC

FBG10N05AC

FBG10N05AC

EPC Space, LLC

GAN FET HEMT 100V5A COTS 4FSMD-A

non-compliant

FBG10N05AC Pricing & Ordering

Quantity Unit Price Ext. Price
1 $313.40000 $313.4
500 $310.266 $155133
1000 $307.132 $307132
1500 $303.998 $455997
2000 $300.864 $601728
2500 $297.73 $744325
68 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 44mOhm @ 5A, 5V
Vgs(th) (Max) @ Id 2.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs 2.2 nC @ 5 V
Vgs (Max) +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds 233 pF @ 50 V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-SMD
Package / Case 4-SMD, No Lead
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