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ZXMN6A08GQTA

ZXMN6A08GQTA

ZXMN6A08GQTA

Diodes Incorporated

MOSFET N-CH 60V 3.8A SOT223

non-compliant

ZXMN6A08GQTA Pricing & Ordering

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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 80mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.8 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 459 pF @ 40 V
FET Feature -
Power Dissipation (Max) 2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223-3
Package / Case TO-261-4, TO-261AA
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