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ZXMN10B08E6QTA

ZXMN10B08E6QTA

ZXMN10B08E6QTA

Diodes Incorporated

MOSFET BVDSS: 61V~100V SOT26 T&R

compliant

ZXMN10B08E6QTA Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.39492 $0.39492
500 $0.3909708 $195.4854
1000 $0.3870216 $387.0216
1500 $0.3830724 $574.6086
2000 $0.3791232 $758.2464
2500 $0.375174 $937.935
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.3V, 10V
Rds On (Max) @ Id, Vgs 230mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.2 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 497 pF @ 50 V
FET Feature -
Power Dissipation (Max) 1.1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-26
Package / Case SOT-23-6
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