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ZXMN10A25GTA

ZXMN10A25GTA

ZXMN10A25GTA

Diodes Incorporated

MOSFET N-CH 100V 2.9A SOT223

non-compliant

ZXMN10A25GTA Pricing & Ordering

Quantity Unit Price Ext. Price
1,000 $0.56760 -
2,000 $0.52976 -
5,000 $0.50327 -
10,000 $0.48435 -
0 items
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Wholesale Prices for Every Order, Big or Small
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 859 pF @ 50 V
FET Feature -
Power Dissipation (Max) 2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223-3
Package / Case TO-261-4, TO-261AA
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