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ZXMN10A25GTA

ZXMN10A25GTA

ZXMN10A25GTA

Diodes Incorporated

MOSFET N-CH 100V 2.9A SOT223

compliant

ZXMN10A25GTA Pricing & Ordering

Quantity Unit Price Ext. Price
1,000 $0.56760 -
2,000 $0.52976 -
5,000 $0.50327 -
10,000 $0.48435 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 859 pF @ 50 V
FET Feature -
Power Dissipation (Max) 2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223-3
Package / Case TO-261-4, TO-261AA
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