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ZXM62P02E6TA

ZXM62P02E6TA

ZXM62P02E6TA

Diodes Incorporated

MOSFET P-CH 20V 2.3A SOT23-6

compliant

ZXM62P02E6TA Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.34105 -
6,000 $0.32015 -
15,000 $0.30970 -
30,000 $0.30400 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V
Rds On (Max) @ Id, Vgs 200mOhm @ 1.6A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 5.8 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 320 pF @ 15 V
FET Feature -
Power Dissipation (Max) 1.1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-6
Package / Case SOT-23-6
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