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DMTH6006LPSWQ-13

DMTH6006LPSWQ-13

DMTH6006LPSWQ-13

Diodes Incorporated

MOSFET N-CH 60V 17.2A/100A PWRDI

compliant

DMTH6006LPSWQ-13 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.49465 $0.49465
500 $0.4897035 $244.85175
1000 $0.484757 $484.757
1500 $0.4798105 $719.71575
2000 $0.474864 $949.728
2500 $0.4699175 $1174.79375
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 17.2A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 34.9 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2162 pF @ 30 V
FET Feature -
Power Dissipation (Max) 2.88W (Ta), 100W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerDI5060-8 (Type Q)
Package / Case 8-PowerTDFN
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