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DMTH6006LPSW-13

DMTH6006LPSW-13

DMTH6006LPSW-13

Diodes Incorporated

MOSFET N-CH 60V 17.2A/100A PWRDI

compliant

DMTH6006LPSW-13 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.42858 $0.42858
500 $0.4242942 $212.1471
1000 $0.4200084 $420.0084
1500 $0.4157226 $623.5839
2000 $0.4114368 $822.8736
2500 $0.407151 $1017.8775
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 17.2A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 34.9 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2162 pF @ 30 V
FET Feature -
Power Dissipation (Max) 2.88W (Ta), 100W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerDI5060-8 (Type Q)
Package / Case 8-PowerTDFN
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