Welcome to ichome.com!

logo
Home

DMTH10H1M7STLWQ-13

DMTH10H1M7STLWQ-13

DMTH10H1M7STLWQ-13

Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI10

non-compliant

DMTH10H1M7STLWQ-13 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $5.78000 $5.78
500 $5.7222 $2861.1
1000 $5.6644 $5664.4
1500 $5.6066 $8409.9
2000 $5.5488 $11097.6
2500 $5.491 $13727.5
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 250A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 147 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9871 pF @ 50 V
FET Feature -
Power Dissipation (Max) 6W (Ta), 250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package POWERDI1012-8
Package / Case 8-PowerSFN
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

RQ6E035ATTCR
FQAF16N50
FQAF16N50
$0 $/piece
R6004CNDTL
SI1403BDL-T1-E3
NTMFS4C10NBT1G
NTMFS4C10NBT1G
$0 $/piece
SI7309DN-T1-GE3
STW68N60M6-4

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.