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DMTH10H010LCTB-13

DMTH10H010LCTB-13

DMTH10H010LCTB-13

Diodes Incorporated

MOSFET N-CH 100V 108A TO220AB

non-compliant

DMTH10H010LCTB-13 Pricing & Ordering

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800 $0.96900 $775.2
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 108A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 9.5mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 53.7 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2592 pF @ 50 V
FET Feature -
Power Dissipation (Max) 2.4W (Ta), 166W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
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