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DMT67M8LK3-13

DMT67M8LK3-13

DMT67M8LK3-13

Diodes Incorporated

MOSFET BVDSS: 41V~60V TO252 T&R

non-compliant

DMT67M8LK3-13 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.39460 $0.3946
500 $0.390654 $195.327
1000 $0.386708 $386.708
1500 $0.382762 $574.143
2000 $0.378816 $757.632
2500 $0.37487 $937.175
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 87A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 37.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2130 pF @ 30 V
FET Feature -
Power Dissipation (Max) 3.1W (Ta), 89.3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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