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DMT67M8LCGQ-13

DMT67M8LCGQ-13

DMT67M8LCGQ-13

Diodes Incorporated

MOSFET N-CH 60V 16A/64.6A 8DFN

compliant

DMT67M8LCGQ-13 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.50558 $0.50558
500 $0.5005242 $250.2621
1000 $0.4954684 $495.4684
1500 $0.4904126 $735.6189
2000 $0.4853568 $970.7136
2500 $0.480301 $1200.7525
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 16A (Ta), 64.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 37.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2130 pF @ 30 V
FET Feature -
Power Dissipation (Max) 900mW (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package V-DFN3333-8 (Type B)
Package / Case 8-PowerVDFN
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