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DMT64M2LPSW-13

DMT64M2LPSW-13

DMT64M2LPSW-13

Diodes Incorporated

MOSFET N-CH 60V 20.7A/100A PWRDI

compliant

DMT64M2LPSW-13 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.44598 $0.44598
500 $0.4415202 $220.7601
1000 $0.4370604 $437.0604
1500 $0.4326006 $648.9009
2000 $0.4281408 $856.2816
2500 $0.423681 $1059.2025
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 20.7A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 46.7 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2799 pF @ 30 V
FET Feature -
Power Dissipation (Max) 2.8W (Ta), 83.3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerDI5060-8 (Type Q)
Package / Case 8-PowerTDFN
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