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DMT6012LFDF-7

DMT6012LFDF-7

DMT6012LFDF-7

Diodes Incorporated

MOSFET N-CH 60V 9.5A 6UDFN

non-compliant

DMT6012LFDF-7 Pricing & Ordering

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3,000 $0.27356 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 9.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13.6 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 785 pF @ 30 V
FET Feature -
Power Dissipation (Max) 900mW (Ta), 11W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package U-DFN2020-6 (Type F)
Package / Case 6-UDFN Exposed Pad
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