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DMT3009UFVW-7

DMT3009UFVW-7

DMT3009UFVW-7

Diodes Incorporated

MOSFET N-CH 30V 10.6A/30A PWRDI

compliant

DMT3009UFVW-7 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.18909 $0.18909
500 $0.1871991 $93.59955
1000 $0.1853082 $185.3082
1500 $0.1834173 $275.12595
2000 $0.1815264 $363.0528
2500 $0.1796355 $449.08875
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 10.6A (Ta), 30A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 11mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.4 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 894 pF @ 15 V
FET Feature -
Power Dissipation (Max) 1.2W (Ta), 2.6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank
Supplier Device Package PowerDI3333-8 (SWP) Type UX
Package / Case 8-PowerVDFN
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