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DMT12H090LFDF4-7

DMT12H090LFDF4-7

DMT12H090LFDF4-7

Diodes Incorporated

MOSFET N-CH 115V 3.4A 6DFN

compliant

DMT12H090LFDF4-7 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.39588 $0.39588
500 $0.3919212 $195.9606
1000 $0.3879624 $387.9624
1500 $0.3840036 $576.0054
2000 $0.3800448 $760.0896
2500 $0.376086 $940.215
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 115 V
Current - Continuous Drain (Id) @ 25°C 3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 3V, 10V
Rds On (Max) @ Id, Vgs 90mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 251 pF @ 50 V
FET Feature -
Power Dissipation (Max) 900mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package X2-DFN2020-6
Package / Case 6-PowerXDFN
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