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DMT10H072LFV-13

DMT10H072LFV-13

DMT10H072LFV-13

Diodes Incorporated

MOSFET N-CH 100V PWRDI3333

compliant

DMT10H072LFV-13 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.24388 $0.24388
500 $0.2414412 $120.7206
1000 $0.2390024 $239.0024
1500 $0.2365636 $354.8454
2000 $0.2341248 $468.2496
2500 $0.231686 $579.215
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 4.7A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 62mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 228 pF @ 50 V
FET Feature -
Power Dissipation (Max) 2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerDI3333-8 (Type UX)
Package / Case 8-PowerVDFN
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