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DMT10H072LFV-13

DMT10H072LFV-13

DMT10H072LFV-13

Diodes Incorporated

MOSFET N-CH 100V PWRDI3333

compliant

DMT10H072LFV-13 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.24388 $0.24388
500 $0.2414412 $120.7206
1000 $0.2390024 $239.0024
1500 $0.2365636 $354.8454
2000 $0.2341248 $468.2496
2500 $0.231686 $579.215
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 4.7A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 62mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 228 pF @ 50 V
FET Feature -
Power Dissipation (Max) 2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerDI3333-8 (Type UX)
Package / Case 8-PowerVDFN
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