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DMT10H017LPD-13

DMT10H017LPD-13

DMT10H017LPD-13

Diodes Incorporated

MOSFET BVDSS: 61V-100V POWERDI50

non-compliant

DMT10H017LPD-13 Pricing & Ordering

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2,500 $0.82128 -
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Name Value
Product Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 54.7A (Tc)
Rds On (Max) @ Id, Vgs 17.4mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 28.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1986pF @ 50V
Power - Max 2.2W (Ta), 78W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Supplier Device Package PowerDI5060-8
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