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DMT10H015LCG-13

DMT10H015LCG-13

DMT10H015LCG-13

Diodes Incorporated

MOSFET N-CH 100V 9.4A/34A 8DFN

non-compliant

DMT10H015LCG-13 Pricing & Ordering

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3,000 $0.46980 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 9.4A (Ta), 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 15mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33.3 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1871 pF @ 50 V
FET Feature -
Power Dissipation (Max) 1W (Ta)
Operating Temperature -55°C ~ 155°C (TJ)
Mounting Type Surface Mount
Supplier Device Package V-DFN3333-8
Package / Case 8-PowerVDFN
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