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DMT10H009LH3

DMT10H009LH3

DMT10H009LH3

Diodes Incorporated

MOSFET N-CH 100V 84A TO251

compliant

DMT10H009LH3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.95080 $0.9508
500 $0.941292 $470.646
1000 $0.931784 $931.784
1500 $0.922276 $1383.414
2000 $0.912768 $1825.536
2500 $0.90326 $2258.15
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 84A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20.2 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2309 pF @ 50 V
FET Feature -
Power Dissipation (Max) 96W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-251
Package / Case TO-251-3 Stub Leads, IPak
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