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DMN80H2D0SCTI

DMN80H2D0SCTI

DMN80H2D0SCTI

Diodes Incorporated

MOSFET N-CH 800V 7A ITO220AB

compliant

DMN80H2D0SCTI Pricing & Ordering

Quantity Unit Price Ext. Price
50 $1.47600 $73.8
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35.4 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1253 pF @ 25 V
FET Feature -
Power Dissipation (Max) 41W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package ITO-220AB
Package / Case TO-220-3 Full Pack, Isolated Tab
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