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DMN60H080DS-13

DMN60H080DS-13

DMN60H080DS-13

Diodes Incorporated

MOSFET N-CH 600V 80MA SOT23-3

compliant

DMN60H080DS-13 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.07877 $0.07877
500 $0.0779823 $38.99115
1000 $0.0771946 $77.1946
1500 $0.0764069 $114.61035
2000 $0.0756192 $151.2384
2500 $0.0748315 $187.07875
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 80mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 100Ohm @ 60mA, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.7 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 25 pF @ 25 V
FET Feature -
Power Dissipation (Max) 1.1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
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