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DMN6013LFGQ-13

DMN6013LFGQ-13

DMN6013LFGQ-13

Diodes Incorporated

MOSFET N-CH 60V 10.3A PWRDI3333

compliant

DMN6013LFGQ-13 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.37690 $0.3769
500 $0.373131 $186.5655
1000 $0.369362 $369.362
1500 $0.365593 $548.3895
2000 $0.361824 $723.648
2500 $0.358055 $895.1375
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 10.3A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 13mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 55.4 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2577 pF @ 30 V
FET Feature -
Power Dissipation (Max) 1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerDI3333-8
Package / Case 8-PowerVDFN
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