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DMN30H4D0LFDE-13

DMN30H4D0LFDE-13

DMN30H4D0LFDE-13

Diodes Incorporated

MOSFET N-CH 300V 550MA 6UDFN

non-compliant

DMN30H4D0LFDE-13 Pricing & Ordering

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10,000 $0.11937 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V
Current - Continuous Drain (Id) @ 25°C 550mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 10V
Rds On (Max) @ Id, Vgs 4Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.6 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 187.3 pF @ 25 V
FET Feature -
Power Dissipation (Max) 630mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package U-DFN2020-6 (Type E)
Package / Case 6-PowerUDFN
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