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DMN2014LHAB-7

DMN2014LHAB-7

DMN2014LHAB-7

Diodes Incorporated

MOSFET 2N-CH 20V 9A 6-UDFN

SOT-23

non-compliant

DMN2014LHAB-7 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.21374 -
6,000 $0.20140 -
15,000 $0.18906 -
30,000 $0.18042 -
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type 2 N-Channel (Dual) Common Drain
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 9A
Rds On (Max) @ Id, Vgs 13mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1550pF @ 10V
Power - Max 800mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-UFDFN Exposed Pad
Supplier Device Package U-DFN2030-6 (Type B)
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