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DMN2014LHAB-7

DMN2014LHAB-7

DMN2014LHAB-7

Diodes Incorporated

MOSFET 2N-CH 20V 9A 6-UDFN

compliant

DMN2014LHAB-7 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.21374 -
6,000 $0.20140 -
15,000 $0.18906 -
30,000 $0.18042 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type 2 N-Channel (Dual) Common Drain
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 9A
Rds On (Max) @ Id, Vgs 13mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1550pF @ 10V
Power - Max 800mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-UFDFN Exposed Pad
Supplier Device Package U-DFN2030-6 (Type B)
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