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DMN2005UFG-13

DMN2005UFG-13

DMN2005UFG-13

Diodes Incorporated

MOSFET N-CH 20V 18.1A PWRDI3333

compliant

DMN2005UFG-13 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.62000 $0.62
500 $0.6138 $306.9
1000 $0.6076 $607.6
1500 $0.6014 $902.1
2000 $0.5952 $1190.4
2500 $0.589 $1472.5
3000 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 18.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 4.6mOhm @ 13.5A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 164 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 6495 pF @ 10 V
FET Feature -
Power Dissipation (Max) 1.05W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerDI3333-8
Package / Case 8-PowerVDFN
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