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DMN10H170SVT-7

DMN10H170SVT-7

DMN10H170SVT-7

Diodes Incorporated

MOSFET N-CH 100V 2.6A TSOT26

non-compliant

DMN10H170SVT-7 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.56000 $0.56
500 $0.5544 $277.2
1000 $0.5488 $548.8
1500 $0.5432 $814.8
2000 $0.5376 $1075.2
2500 $0.532 $1330
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 160mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.7 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1167 pF @ 25 V
FET Feature -
Power Dissipation (Max) 1.2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TSOT-26
Package / Case SOT-23-6 Thin, TSOT-23-6
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