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DMN10H170SFGQ-7

DMN10H170SFGQ-7

DMN10H170SFGQ-7

Diodes Incorporated

MOSFET N-CH 100V PWRDI3333

compliant

DMN10H170SFGQ-7 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.30576 $0.30576
500 $0.3027024 $151.3512
1000 $0.2996448 $299.6448
1500 $0.2965872 $444.8808
2000 $0.2935296 $587.0592
2500 $0.290472 $726.18
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 2.9A (Ta), 8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 122mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14.9 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 870.7 pF @ 25 V
FET Feature -
Power Dissipation (Max) 940mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerDI3333-8
Package / Case 8-PowerVDFN
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