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DMN1032UCB4-7

DMN1032UCB4-7

DMN1032UCB4-7

Diodes Incorporated

MOSFET N-CH 12V 4.8A U-WLB1010-4

compliant

DMN1032UCB4-7 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.25146 -
6,000 $0.23694 -
15,000 $0.22242 -
30,000 $0.21226 -
29 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 4.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 26mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.5 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 450 pF @ 6 V
FET Feature -
Power Dissipation (Max) 900mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package U-WLB1010-4
Package / Case 4-UFBGA, WLBGA
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