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DMJ70H1D4SJ3

DMJ70H1D4SJ3

DMJ70H1D4SJ3

Diodes Incorporated

MOSFET BVDSS: 651V~800V TO251 TU

non-compliant

DMJ70H1D4SJ3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.17253 $1.17253
500 $1.1608047 $580.40235
1000 $1.1490794 $1149.0794
1500 $1.1373541 $1706.03115
2000 $1.1256288 $2251.2576
2500 $1.1139035 $2784.75875
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700 V
Current - Continuous Drain (Id) @ 25°C 6.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 273 pF @ 100 V
FET Feature -
Power Dissipation (Max) 78W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-251 (Type TH)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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