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DMJ70H1D4SJ3

DMJ70H1D4SJ3

DMJ70H1D4SJ3

Diodes Incorporated

MOSFET BVDSS: 651V~800V TO251 TU

compliant

DMJ70H1D4SJ3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.17253 $1.17253
500 $1.1608047 $580.40235
1000 $1.1490794 $1149.0794
1500 $1.1373541 $1706.03115
2000 $1.1256288 $2251.2576
2500 $1.1139035 $2784.75875
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700 V
Current - Continuous Drain (Id) @ 25°C 6.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 273 pF @ 100 V
FET Feature -
Power Dissipation (Max) 78W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-251 (Type TH)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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