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DMJ65H430SCTI

DMJ65H430SCTI

DMJ65H430SCTI

Diodes Incorporated

MOSFET BVDSS: 501V~650V ITO-220A

compliant

DMJ65H430SCTI Pricing & Ordering

Quantity Unit Price Ext. Price
1 $2.42560 $2.4256
500 $2.401344 $1200.672
1000 $2.377088 $2377.088
1500 $2.352832 $3529.248
2000 $2.328576 $4657.152
2500 $2.30432 $5760.8
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Last Time Buy
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 430mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24.5 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 775 pF @ 100 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package ITO220AB-N (Type HE)
Package / Case TO-220-3 Full Pack, Isolated Tab
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