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DMG6601LVT-7

DMG6601LVT-7

DMG6601LVT-7

Diodes Incorporated

MOSFET N/P-CH 30V 26TSOT

compliant

DMG6601LVT-7 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.09810 -
6,000 $0.09315 -
15,000 $0.08573 -
30,000 $0.08078 -
75,000 $0.07335 -
150,000 $0.07200 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 3.8A, 2.5A
Rds On (Max) @ Id, Vgs 55mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 422pF @ 15V
Power - Max 850mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package TSOT-26
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