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DMG3N60SJ3

DMG3N60SJ3

DMG3N60SJ3

Diodes Incorporated

MOSFET N-CH 650V 2.8A TO251

compliant

DMG3N60SJ3 Pricing & Ordering

Quantity Unit Price Ext. Price
75 $0.62747 $47.06025
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12.6 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 354 pF @ 25 V
FET Feature -
Power Dissipation (Max) 41W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-251
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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