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DMG1012TQ-7

DMG1012TQ-7

DMG1012TQ-7

Diodes Incorporated

MOSFET N-CH 20V 630MA SOT523

compliant

DMG1012TQ-7 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.06825 -
6,000 $0.06000 -
15,000 $0.05175 -
30,000 $0.04900 -
75,000 $0.04625 -
150,000 $0.04075 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 630mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 400mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.74 nC @ 4.5 V
Vgs (Max) ±6V
Input Capacitance (Ciss) (Max) @ Vds 60.67 pF @ 16 V
FET Feature -
Power Dissipation (Max) 280mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-523
Package / Case SOT-523
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