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SSR2N60BTM

SSR2N60BTM

SSR2N60BTM

N-CHANNEL POWER MOSFET

non-compliant

SSR2N60BTM Pricing & Ordering

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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 490 pF @ 25 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 44W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252-3 (DPAK)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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