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RFD4N06LSM9A

RFD4N06LSM9A

RFD4N06LSM9A

MOSFET N-CH 60V 4A TO252AA

non-compliant

RFD4N06LSM9A Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.52000 $0.52
500 $0.5148 $257.4
1000 $0.5096 $509.6
1500 $0.5044 $756.6
2000 $0.4992 $998.4
2500 $0.494 $1235
67132 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 600mOhm @ 1A, 5V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8 nC @ 10 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 30W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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