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RFD4N06L

RFD4N06L

RFD4N06L

Harris Corporation

N-CHANNEL POWER MOSFET

non-compliant

RFD4N06L Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.28000 $0.28
500 $0.2772 $138.6
1000 $0.2744 $274.4
1500 $0.2716 $407.4
2000 $0.2688 $537.6
2500 $0.266 $665
1424 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 600mOhm @ 1A, 5V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8 nC @ 10 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 30W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-Pak
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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