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RFD3N08L

RFD3N08L

RFD3N08L

Harris Corporation

N-CHANNEL POWER MOSFET

compliant

RFD3N08L Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.29000 $0.29
500 $0.2871 $143.55
1000 $0.2842 $284.2
1500 $0.2813 $421.95
2000 $0.2784 $556.8
2500 $0.2755 $688.75
1346 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 800mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8 nC @ 10 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 30W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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