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RFD20N03SM9A

RFD20N03SM9A

RFD20N03SM9A

Harris Corporation

N-CHANNEL POWER MOSFET

compliant

RFD20N03SM9A Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.78000 $0.78
500 $0.7722 $386.1
1000 $0.7644 $764.4
1500 $0.7566 $1134.9
2000 $0.7488 $1497.6
2500 $0.741 $1852.5
4911 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 25mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 75 nC @ 20 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1150 pF @ 25 V
FET Feature -
Power Dissipation (Max) 90W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252-3 (DPAK)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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