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RF1S4N100SM9A

RF1S4N100SM9A

RF1S4N100SM9A

Harris Corporation

MOSFET N-CH 1000V 4.3A TO263AB

compliant

RF1S4N100SM9A Pricing & Ordering

Quantity Unit Price Ext. Price
1 $3.13000 $3.13
500 $3.0987 $1549.35
1000 $3.0674 $3067.4
1500 $3.0361 $4554.15
2000 $3.0048 $6009.6
2500 $2.9735 $7433.75
187 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 3.5Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 150W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263AB
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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