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RF1S45N03L

RF1S45N03L

RF1S45N03L

Harris Corporation

N-CHANNEL POWER MOSFET

compliant

RF1S45N03L Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.83000 $0.83
500 $0.8217 $410.85
1000 $0.8134 $813.4
1500 $0.8051 $1207.65
2000 $0.7968 $1593.6
2500 $0.7885 $1971.25
770 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 22mOhm @ 45A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 1650 pF @ 25 V
FET Feature -
Power Dissipation (Max) 90W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK (TO-262)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
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