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ISL9N2357D3ST

ISL9N2357D3ST

ISL9N2357D3ST

N-CHANNEL POWER MOSFET

compliant

ISL9N2357D3ST Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.02000 $1.02
500 $1.0098 $504.9
1000 $0.9996 $999.6
1500 $0.9894 $1484.1
2000 $0.9792 $1958.4
2500 $0.969 $2422.5
87500 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 258 nC @ 20 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5600 pF @ 25 V
FET Feature -
Power Dissipation (Max) 100W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252-3 (DPAK)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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