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IRFW530ATM

IRFW530ATM

IRFW530ATM

N-CHANNEL POWER MOSFET

compliant

IRFW530ATM Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.28000 $0.28
500 $0.2772 $138.6
1000 $0.2744 $274.4
1500 $0.2716 $407.4
2000 $0.2688 $537.6
2500 $0.266 $665
2166 items
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Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 790 pF @ 25 V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 55W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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