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IRFD123

IRFD123

IRFD123

Harris Corporation

MOSFET N-CH 100V 1.3A 4DIP

non-compliant

IRFD123 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.80000 $0.8
500 $0.792 $396
1000 $0.784 $784
1500 $0.776 $1164
2000 $0.768 $1536
2500 $0.76 $1900
40377 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 270mOhm @ 780mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
Vgs (Max) -
Input Capacitance (Ciss) (Max) @ Vds 360 pF @ 25 V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -
Mounting Type Through Hole
Supplier Device Package 4-HVMDIP
Package / Case 4-DIP (0.300", 7.62mm)
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