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IRFD113

IRFD113

IRFD113

Harris Corporation

MOSFET N-CH 60V 800MA 4DIP

compliant

IRFD113 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.63000 $0.63
500 $0.6237 $311.85
1000 $0.6174 $617.4
1500 $0.6111 $916.65
2000 $0.6048 $1209.6
2500 $0.5985 $1496.25
53569 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 800mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 800mOhm @ 800mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 25 V
FET Feature -
Power Dissipation (Max) 1W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package 4-HVMDIP
Package / Case 4-DIP (0.300", 7.62mm)
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