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IRF9510

IRF9510

IRF9510

Harris Corporation

MOSFET P-CH 100V 4A TO220AB

non-compliant

IRF9510 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.60000 $0.6
500 $0.594 $297
1000 $0.588 $588
1500 $0.582 $873
2000 $0.576 $1152
2500 $0.57 $1425
2685 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 2.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.7 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 25 V
FET Feature -
Power Dissipation (Max) 43W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
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