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IRF630

IRF630

IRF630

Harris Corporation

MOSFET N-CH 200V 9A TO220AB

non-compliant

IRF630 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.21000 $1.21
50 $0.96900 $48.45
100 $0.84780 $84.78
500 $0.65752 $328.76
1,000 $0.51909 -
2,500 $0.48448 -
5,000 $0.46026 -
23207 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 400mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 43 nC @ 10 V
Vgs (Max) -
Input Capacitance (Ciss) (Max) @ Vds 800 pF @ 25 V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
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