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IRF512

IRF512

IRF512

Harris Corporation

N-CHANNEL POWER MOSFET

compliant

IRF512 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.43000 $0.43
500 $0.4257 $212.85
1000 $0.4214 $421.4
1500 $0.4171 $625.65
2000 $0.4128 $825.6
2500 $0.4085 $1021.25
1663 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 4.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 740mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.7 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 135 pF @ 25 V
FET Feature -
Power Dissipation (Max) 43W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
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