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IRF231

IRF231

IRF231

Harris Corporation

N-CHANNEL POWER MOSFET

compliant

IRF231 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.87000 $0.87
500 $0.8613 $430.65
1000 $0.8526 $852.6
1500 $0.8439 $1265.85
2000 $0.8352 $1670.4
2500 $0.8265 $2066.25
1234 items
Bom Cost Down
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 400mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 25 V
FET Feature -
Power Dissipation (Max) 75W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3
Package / Case TO-204AA, TO-3
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